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氧化锌薄膜的蒸发氧化制备及其光电特性研究
引用本文:陈小敏,邵乐喜. 氧化锌薄膜的蒸发氧化制备及其光电特性研究[J]. 湛江师范学院学报, 2007, 28(3): 63-66
作者姓名:陈小敏  邵乐喜
作者单位:湛江师范学院,物理科学与技术学院,广东,湛江,524048
基金项目:广东省高等学校建设专项基金;教育部留学回国人员科研启动基金
摘    要:采用真空蒸发镀膜的方法分别在玻璃和硅片衬底上沉积金属锌前驱体,再在空气中通过不同温度的退火氧化处理制得氧化锌薄膜,主要研究了不同退火温度对氧化锌薄膜光电特性的影响.实验表明,在一定退火温度样品的方块电阻突增,PL发射峰出现红移,文中对结果进行了初步讨论.

关 键 词:氧化锌薄膜  蒸发镀膜  退火  光致发光
文章编号:1006-4702(2007)03-0063-04
修稿时间:2007-05-27

The Preparation of ZnO Thin Films by Thermal Evaporation and Oxidation and Their Optical and Electrical Properties
CHEN Xiao-min,SHAO Le-xi. The Preparation of ZnO Thin Films by Thermal Evaporation and Oxidation and Their Optical and Electrical Properties[J]. Journal of Zhanjiang Normal College, 2007, 28(3): 63-66
Authors:CHEN Xiao-min  SHAO Le-xi
Affiliation:School of Physics, Zhanjiang Normal College, Zhanjiang,Guangdong 524048, China
Abstract:The vacuum evaporation was used for the deposition of Zinc precursor layers,and ZnO thin films were prepared by oxidizing the precursor in the air in the post treatment of annealing processing at different temperatures.The research was focused on the effects of annealing temperature on the structure and photo-luminescence(PL) of ZnO thin films.The results show that resistivity and PL of the films has a strong dependence of annealing temperature,that is,the resistivity suddenly rising and PL peak red-shifting at a certain temperature.A simple discussion was made about the results.
Keywords:ZnO thin films  evaporating deposition  annealing  PL spectra
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