| 宽禁带功率半导体器件技术 |
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| 引用本文： | 张波,邓小川,陈万军,李肇基.宽禁带功率半导体器件技术[J].电子科技大学学报(社会科学版),2009(5). |
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| 作者姓名： | 张波 邓小川 陈万军 李肇基 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室; |
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| 摘 要： | 碳化硅(SiC)和氮化镓(GaN)是第三代半导体材料的典型代表。与常规半导体硅(Si)和砷化镓(GaAs)相比,宽禁带半导体具有宽带隙、高饱和漂移速度、高临界击穿电场等突出优点,是大功率、高温、高频、抗辐照应用场合下极为理想的半导体材料。该文总结了宽禁带SiC和GaN功率半导体器件研发的最新进展,包括各种功率二极管和功率晶体管。同时对宽禁带SiC和GaN功率半导体器件发展所面临的市场和技术挑战进行了分析与概述,并对其发展前景进行了展望。
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| 关 键 词： | 氮化镓 功率器件 碳化硅 宽禁带半导体 |
Wide Bandgap Semiconductors for Power Electronics |
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| ZHANG Bo,DENG Xiao-chuan,CHEN Wan-jun, LI Zhao-ji.Wide Bandgap Semiconductors for Power Electronics[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),2009(5). |
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| Authors: | ZHANG Bo DENG Xiao-chuan CHEN Wan-jun LI Zhao-ji |
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| Institution: | ZHANG Bo,DENG Xiao-chuan,CHEN Wan-jun,, LI Zhao-ji (State Key Laboratory of Electronic Thin Films , Integrated Devices,University of Electronic Science , Technology of China Chengdu 610054) |
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| Abstract: | Wide bandgap semiconductors,such as silicon carbide(SiC) and gallium nitride(GaN),are considered to be excellent candidates for high power,high frequency and high temperature applications in the commercial and military power distribution and conversion systems.The advantages of wide bandgap materials over the conventional Si and GaAs include wide bandgap,high saturation electron velocity,and high critical electric field.In this paper,the recent progress in the development of high-voltage SiC and GaN power s... |
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| Keywords: | gallium nitride power device silicon carbide wide bandgap semiconductor |
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