| 真空微电子二极管的隧道效应 |
| |
| 引用本文： | 宫玉彬,王文祥. 真空微电子二极管的隧道效应[J]. 电子科技大学学报(社会科学版), 1996, 0(Z1) |
| |
| 作者姓名： | 宫玉彬 王文祥 |
| |
| 作者单位： | 成都电子科技大学大功率微波重点实验室 |
| |
| 摘 要： | 采用许瓦兹－克里斯托福变换，求得了以椭圆锥为发射体的真空微电子二极管区域的电位分布的解析解。采用自由电子模型，运用ＷＫＢ近似，对真空微电子二极管的表面势垒和隧道电流进行了理论研究，求得了表面势垒和隧道电流的表达式，并进行了数值计算。
|
| 关 键 词： | 二极管；真空微电子；保角变换；隧道效应 |
Analysis of the Tunneling Effect of Vacuum Microelectronic Diode |
| |
| Gong Yubin, Wang Wenxiang. Analysis of the Tunneling Effect of Vacuum Microelectronic Diode[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 1996, 0(Z1) |
| |
| Authors: | Gong Yubin Wang Wenxiang |
| |
| Abstract: | In this paper,a conformal mapping analysis of a vacuum microelectronic diode is presented,which uses an elliptic cone conductor as its cathode. Using the Schwarz-Chtiseffd transformation twice,the diode is transformated into a plate capacitor. The electrostatic potential and electrostatic field distribution are obtained,and the calculation results are sketched in this paper. Emission current formulation of the diode is derived under the WKB approximation,by means of the free electron model. Some useful conclusions are drawn. Also,the formulations developed in this paper can be extended tO vacuum microelectronic triode. |
| |
| Keywords: | conformal transformation diode vacuum microelectronic tunneling effect |
| 本文献已被 CNKI 等数据库收录！ |
|
