| 氢化非晶硅膜的制备及其钝化机理 |
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| 引用本文： | 刘明.氢化非晶硅膜的制备及其钝化机理[J].鲁东大学学报,1989(2). |
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| 作者姓名： | 刘明 |
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| 作者单位： | 烟台师范学院物理系 |
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| 摘 要： | 介绍了采用辉光放电(GD)法淀积用作钝化的氢化非晶硅(a-Si:H)膜,并将其应用于硅器件的表面钝化。结果表明,采用a-Si:H钝化,器件表面态密度显著下降,特性有较大改善。此外,对a-Si:H的钝化机理作了讨论。
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| 关 键 词： | 钝化膜 表面态密度 钝化机理 |
THE PREPARATION OF a-Si: H PASSIVATION FILM AND PASSIVATION MECHANISM |
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| Liu Ming.THE PREPARATION OF a-Si: H PASSIVATION FILM AND PASSIVATION MECHANISM[J].Ludong University Journal (Natural Science Edition),1989(2). |
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| Authors: | Liu Ming |
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| Institution: | Physics Departement |
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| Abstract: | The a-Si:H used as passivation film is deposited by GD method.The experimental results show that, using a-Si'H Passivation, the density of surface state of device drops rapidly and the characteristics of d3-vice are greatly improved. The passivated mechanism of a-Si: H film is also disscussed |
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| Keywords: | Passivation flim density of surface state passivation mechanism |
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