| 掺杂半导体中孤立杂质能级的研究 |
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| 引用本文： | 柏维.掺杂半导体中孤立杂质能级的研究[J].电子科技大学学报(社会科学版),1993(1). |
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| 作者姓名： | 柏维 |
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| 作者单位： | 电子科技大学应用物理系 成都 |
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| 摘 要： | 提出一种计算掺杂半导体中孤立杂质能级的方法,该方法建立在密度函数理论基础之上。在应用时只需考虑杂质原子所在处的电子密度状态,对所研究对象的对称性没有特别的要求。在低掺杂浓度下,理论计算结果与实验结果基本一致。
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| 关 键 词： | 孤立杂质 杂质能级 密度函数 电子密度 浅能级 深能级 掺杂半导体 |
A STUDY OF ISOLATED IMPURITY LEVELS IN DOPED SEMICONDUCTORS |
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| Bai Wei.A STUDY OF ISOLATED IMPURITY LEVELS IN DOPED SEMICONDUCTORS[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1993(1). |
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| Authors: | Bai Wei |
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| Abstract: | Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors. The method that only considers the state of electronic density at impurity atoms does not has special demand for the symmetry of systems in its application. The theoretical results are in good agreement with experiment under light doped concentration. |
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| Keywords: | isolated impurity impurity energy level density functional electronic density shallow level deep level doped semiconductor |
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