真空蒸发碲化物薄膜光电性能的研究

采用高温烧结和真空蒸发制备了ＣｄＴｅ光敏薄膜，探讨了制备工艺对ＣｄＴｅ薄膜性能和结构的影响，说明了在基片温度为１３０℃左右下制备的ＣｄＴｅ薄膜具有明显的光敏特性，并得到ＣｄＴｅ材料的禁带宽度为１．６３ｅＶ。利用Ｘ衍射对不同基片温度下制备的ＣｄＴｅ薄膜材料进行了结构分析，发现基片温度为１３０℃左右时制备的ＣｄＴｅ薄膜具有明显的衍射峰。

TCR Square error Analysis of Ta/Al Alloy Thin Films

In the process of preparing Ta/Al alloy resistance thin films with DC co sputtering,the influence of the main technological parameters such as target substrate distance,gas pressure,sputtering voltage and heat treatment time etc.on the temperature coefficient of resistance (TCR) of the films is investigated.The methods of square error analysis and orthogonal experiment are suggested for obtaining optimal process condition and TCR of the films.The results show that Ta/Al alloy thin films with ideal TCR characteristic can be prepared,as long as the four part main technological parameter is selected and controlled properly.At the same time,the effectiveness of the method of square error analysis is proved.