基于正交试验的雾化施液抛光工艺参数研究

为了研究雾化施液化学机械抛光工艺参数对抛光效果的影响，以抛光盘转速、抛光压力、雾化器电压、氧化剂质量分数为因素，以材料去除率和表面粗糙度为评价指标设计正交试验，再对试验结果进行直观分析和权矩阵分析，得到了各因素对试验结果的影响趋势和程度，并得到了最佳参数组合。结果表明：在雾化施液抛光过程中抛光效果随抛光盘转速的增大而增大；随抛光压力的增大呈先增大后减小的趋势；随雾化器电压的增大而增大；随氧化剂质量分数的增大而增大。且影响程度顺序由大到小为：氧化剂质量分数、抛光压力、雾化器电压、抛光盘转速。当抛光盘转速为60 r／mm、抛光压力48 kPa、雾化器电压55 V、氧化剂质量分数为2.5%时，得到材料去除率和表面粗糙度均达到最佳，此时的抛光效果最好。

Process Parameters of Atomizing Slurry Applied CMP Based on Orthogonal Experiment

ln order to study the effects of atomizing slurry applied chemical mechanical polishing process parameters onthe polishing effect, the rotating speed of polishing pad, polishing pressure, voltage of the atomizer and antioxidantquality score were taken as factors. The material removal rate( MRR) and surface roughness were taken as the evaluationindex to design orthogonal experiment. And the visually analyze and weight matrix analysis were done about the testresults. The influence of various factors on the test results of the trend and degree were gotten, and the best combinationof parameters were obtained. The results showed that the polishing effect of atomization process of liquid polishingincreased with rotating speed of polishing pad increasing. The polishing effect first increased, and then decreased withthe increase of polishing pressure. It increased with the increase of atomizer voltage and antioxidant quality score. Theinfluence degree from large to small was antioxidant quality score, polishing pressure, voltage of the atomizer, rotatingspeed of polishing pad. When the rotating speed of polishing pad was 60 r/min, polishing pressure was 48 kPa, voltageof the atomizer was 55 V, antioxidant quality score was 2.5% , the material removal rate and surface roughness reachedthe best, and the polishing effect was best.