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超晶格Al_xGa_(1-x)As/GaAs中相对键强度的研究
引用本文:宫宝安,万亚,李岱青,任廷琦.超晶格Al_xGa_(1-x)As/GaAs中相对键强度的研究[J].鲁东大学学报,1994(1).
作者姓名:宫宝安  万亚  李岱青  任廷琦
作者单位:烟台师范学院化学系,烟台师范学院物理系
摘    要:用半经验的CNDO/2量子化学计算方法,对一组模拟超晶格AlxGa1-xAs/GaAs的原子簇体系作了第一性原理的电子结构研究。结果表明,化学键Al—As和Ga—As的强度,在AlxGa1-xAs环境中的结果均高于它们在纯晶体AlAs和GaAs环境中的数值;随着AlxGa1-xAs中X值的增大,Ga-As键强度相应地提高,但平均键强度计算结果,Ga-As总低于同环境中的Al-As。本文结果同AlxGa1-xAs/GaAs红外光谱键强度分析等实验事实相吻合,而且为离子注入AlxGa1-xAs/GaAs中引起的晶格损伤分布行为提供了合理的解释。

关 键 词:超晶格,CNDO/2,化学键强度

Investigation of Relative Bond Strength in Al_xGa_(1-x)As/GaAs Superlattices
Gong Baoan, Wan Ya, Li Daiqing, Ren Tingq.Investigation of Relative Bond Strength in Al_xGa_(1-x)As/GaAs Superlattices[J].Ludong University Journal (Natural Science Edition),1994(1).
Authors:Gong Baoan  Wan Ya  Li Daiqing  Ren Tingq
Abstract:The electronic structures of a group of atomic cluster systems used to simulate AIxGa1-xAs/GaAs superlattices are investigated on first-principles study using CNDO/2 which is a semiempirical method in quantum chemistry computation. The results show that the strength of chemical bonds Al-As and Ga-As in environment AlxGa1-x As are greater than those in pure crystals AlAs and GaAs ,and the strength of Ga-As increases with increasing x value in AlxGa1-xAs,but the average strength of Ga-As is always smaller than that of Al-As in same environment.These results are in agreement with the bond strength analysis of infrared reflection spectra of AlxGa1-xAs and can explain the distribution of lattice damage created in ion-implanted AlxGa1-xAs/GaAs superlattices.
Keywords:superlattice  CNDO/2  chemical bond strength  
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