| 8毫米硅DDR IMPATT器件的实验研究 |
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| 引用本文： | 杜佳.8毫米硅DDR IMPATT器件的实验研究[J].电子科技大学学报(社会科学版),1987(3). |
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| 作者姓名： | 杜佳 |
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| 摘 要： | 本文根据IMPATT器件的基本理论和计算机模拟参数,设计了8毫米硅杂质缓变DDR IMPATT器件的结构、工作参数。并用双扩散的常规工艺成功地制得了该器件,获得了功率大于400mW,效率达7％的实验结果。
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| 关 键 词： | 雪崩二极管 毫米波 扩散 设计 实验 双漂移 |
THE EXPERIMENTAL INVESTIGATION OF Si 8 mm DDR IMPATT DEVICES |
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| Du Jia.THE EXPERIMENTAL INVESTIGATION OF Si 8 mm DDR IMPATT DEVICES[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1987(3). |
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| Authors: | Du Jia |
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| Abstract: | An 8 mm Si graded DDR IMPATT device has been designed, based on the basic theory and DC parameters obtained from numerical computation. The device has been fabricated successfully with method of diffusion. Output power in excess of 400 mw and efficiency of 7 percent have been obtained. |
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| Keywords: | Avalanche diodes millimeter wave diffusion design experiment Double drift region |
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