| 普通台面工艺制作新型超薄基区负阻HBT |
| |
| 引用本文： | 齐海涛,郭维廉,张世林. 普通台面工艺制作新型超薄基区负阻HBT[J]. 电子科技大学学报(社会科学版), 2007, 0(1) |
| |
| 作者姓名： | 齐海涛 郭维廉 张世林 |
| |
| 作者单位： | 天津大学电子信息工程学院，天津大学电子信息工程学院，天津大学电子信息工程学院 天津南开区300072 中国电子科技集团公司第十三研究所石家庄050051，天津南开区300072，天津南开区300072 |
| |
| 基金项目： | 国家重点基础研究计划项目(973)(2002CB311905)，中国博士后科学基金 |
| |
| 摘 要： | 负阻型HBT既保持了原HBT高频、高速的特点,同时又具有负阻、双稳、自锁等特性,是一种极具研究价值的新型负阻器件。该文从Early效应造成超薄基区穿通,器件由双极工作状态向体势垒管工作状态转变从而形成负阻特性的思路出发,通过对材料结构的特殊设计,采用普通台面工艺研制出了基区厚度为8nm的负阻型HBT。该器件具有独特且显著的可变电压控制型负阻特性,其电流峰谷比大于1000,并伴有电流控制型负阻。
|
| 关 键 词： | 异质结双极晶体管 负阻 超薄基区 体势垒晶体管 |
Novel Ultra-Thin Base NDR HBT Fabricated by Common Mesa Process |
| |
| QI Hai-tao,,GUO Wei-lian,ZHANG Shi-lin. Novel Ultra-Thin Base NDR HBT Fabricated by Common Mesa Process[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 2007, 0(1) |
| |
| Authors: | QI Hai-tao GUO Wei-lian ZHANG Shi-lin |
| |
| Affiliation: | QI Hai-tao1,2,GUO Wei-lian1,ZHANG Shi-lin1 |
| |
| Abstract: | Negative Differential Resistance (NDR) Heterojunction Bipolar Transistor (HBT) holds high speed, high frequency characteristics of HBT and bistability, self-latching characteristics derived from NDR, is compatible with HBT manufacture technique, and has good research and application value. Based on the thought that Early effect causes very thin base reach-through, bipolar operation mode changes to barrier transistor operation mode and NDR appears, a novel 8 nm base NDR HBT has been fabricated through special design of device structure and common HBT mesa process, which has distinct and special variable voltage-controlled NDR characteristic and current-controlled NDR characteristic. The Peak to Valley Current Ratio(PVCR)voltage-controlled NDR character is higher than 1 000. All of phenomena are reported for the first time. |
| |
| Keywords: | heterojunction bipolar transistor negative differential resistance ultra-thin base barrier transistor |
| 本文献已被 CNKI 等数据库收录！ |
|
