| 高精度基准电压源的设计 |
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| 引用本文： | 高伟,施吕蓉,陈素芹. 高精度基准电压源的设计[J]. 宿州学院学报, 2012, 27(8): 53-55,65 |
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| 作者姓名： | 高伟 施吕蓉 陈素芹 |
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| 作者单位： | 1. 芜湖职业技术学院电子信息系,安徽芜湖,241003
2. 芜湖职业技术学院基础部,安徽芜湖,241003 |
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| 基金项目： | 安徽省高校省级自然科学研究项目"高精度基准电源的设计" |
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| 摘 要： | 根据相关理论,设计出一个带隙基准电压源电路,包括带隙基准电压源电路核心部分、运算放大器、偏置电路以及启动电路。电路设计完成后,利用0.18μm CSMC-HJ N阱CMOS工艺模型库,使用仿真软件对电路进行仿真。工作电压1.8V,工作温度在-20℃到100℃之间。仿真结果表明,该设计的温度系数为6.1ppm/℃,随着电源电压的变化,输出电压的变化仅为0.005mV/V。
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| 关 键 词： | 温度补偿 带隙基准电压源 运算放大器 |
The Design of High-precision Reference Voltage Source |
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| GAO Wei , SHI Lv-rong , CHEN Su-qin. The Design of High-precision Reference Voltage Source[J]. Journal of Shuzhou College, 2012, 27(8): 53-55,65 |
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| Authors: | GAO Wei SHI Lv-rong CHEN Su-qin |
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| Affiliation: | 1.Department of Electronic Engineering,Wuhu Institute of Technology,Wuhu Anhui,2410032.Department of basic courses,Wuhu Institute of Technology,Wuhu Anhui,2410033.Department of Electronic Engineering,Wuhu Institute of Technology,Wuhu Anhui,241003,China |
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| Abstract: | According to the related theory,a bandgap voltage source circuit benchmark was designed,which includes the bandgap voltage source circuit core part benchmark,operation amplifier offset circuit and startup circuit. After the completion of the circuit design,0.18 m CSMC-HJ N trap CMOS process model library and simulation software were used to simulate the circuit. The working voltage was 1.8 V,and the working temperature was between -20℃ to 100℃. The simulation results show that the design of the temperature coefficient is 6.1 ppm/℃. Along with the change of the power supply voltage,the output voltage change is just 0. 005 mV/V. |
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