| 非晶Ge-S半导体薄膜的研制 |
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| 引用本文： | 朱尧江,姜节俭.非晶Ge-S半导体薄膜的研制[J].电子科技大学学报(社会科学版),1989(4). |
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| 作者姓名： | 朱尧江 姜节俭 |
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| 作者单位： | 电子科技大学材料科学与工程系，电子科技大学材料科学与工程系 |
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| 摘 要： | 我们用高温熔融和空气中碎火的方法制取了非晶 Ge-S 块状材料,又以该材料为蒸发源材料,用热蒸发方法制备非晶 Ge-S 薄膜。对不同配方比的薄膜进行了光、电性能测试并分析和讨论了测试结果,得出了光学禁带宽度与硫含量的关系。
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| 关 键 词： | 非晶态半导体 硫系玻璃半导体 局域态 光学禁带宽度 光吸收系数 |
THE RESEARCH OF AMORPHOUS SEMICONDUCTOR Ge-S FILMS |
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| Zhu Yaojiang Jiang Jiejian.THE RESEARCH OF AMORPHOUS SEMICONDUCTOR Ge-S FILMS[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1989(4). |
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| Authors: | Zhu Yaojiang Jiang Jiejian |
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| Institution: | Dept.of Materials Science and Engineering |
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| Abstract: | The authors prepared amorphous Ge-S bulk materials by a method of high temperature melting with air quenching and then they take it as a vaporization soures by hearting vaporization method to prepare amorphous Ge-S film.Optical and electrical properties of the film for various componsition of sulfur are measured.The results are analysised and discussed.Finally,the relationship between the width of the optical for- bidden band and concentrations of sulfur are obtained. |
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| Keywords: | amorphous semiconductor chalcogenide glass semiconductor localized state width of optical forbidden band optical absorption coefficient |
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