| AM混合相Si:P:H薄膜的制备与分析 |
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| 引用本文： | 刘明. AM混合相Si:P:H薄膜的制备与分析[J]. 鲁东大学学报, 1989, 0(1) |
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| 作者姓名： | 刘明 |
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| 作者单位： | 烟台师范学院物理系 |
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| 摘 要： | 本文介绍了SiH_4/PH_3混合气体的高频辉光放电法,在硅、玻璃衬底上淀积的掺P氢化非晶硅膜的结构和特性,并对样品作了高温退火试验。应用x射线衍射和红外吸收,对淀积膜的结构性质作了探讨和分析。结果表明,所淀积的是一种微晶——非晶混合相掺P氢化非晶硅膜(AM-Si:P:H),这种膜具有良好的光电性能,较高的掺杂效率。经退火后,光电性能有所改善,是P-i-n太阳能电池所希望的n~ 材料。
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| 关 键 词： | 高频辉光放电法 AM混合相Si:P:H 退火 掺杂效率 |
Preparation and Analysis of AM Mixed Si:P.H Film |
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| Liu Ming. Preparation and Analysis of AM Mixed Si:P.H Film[J]. Ludong University Journal (Natural Science Edition), 1989, 0(1) |
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| Authors: | Liu Ming |
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| Affiliation: | Physics Department |
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| Abstract: | The P-doped a-Si : H film is deposited on substrate of silicon and. glass by high RF of GD method from the mixture of SiH4 and PH3 -The structure and properties of the film are studied by infrared Spectrum and X-ray diffraction. The experimental results show. the film is a microerystal1ine . The film has good optical and electrical properties. It is a kind of basic material of low cost for solar-c ells. |
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| Keywords: | high RF of GD method AM-mixed film annealing doping efficiency |
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