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为实现对垂直腔面发射半导体激光器氧化孔径的精确控制，提高其光电特性，对湿法氧化工艺进行了实验研究。在不同的氧化温度下，对相同结构的垂直腔面发射半导体激光器模拟片进行湿法氧化。采用X射线能谱分析仪，对氧化后模拟片的氧化层按不同的氧化深度对其氧化生成物进行检测，依据氧化生成物中氧元素组分浓度的变化，对氧化过程进行了分析与讨论，推导出在一定的温度下，氧化速率随时间变化的一般规律，提出了在垂直腔面发射半导体激光器的湿法氧化工艺过程中，适当降低氧化温度，延长氧化时间，可减小氧化限制孔径的控制误差,提高氧化工艺的准确性与稳定性。

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The wet oxidation process is studied with experiments in vertical-cavity surface- emitting lasers (VCSEL) in order to accurately control the oxidation aperture and improve the performance of photo-electricity.Wet oxidation experiments are carried out upon the simulative wafers of VCSELs with the same structure at different temperature.Oxidation products are examined at different oxidation depths of oxidation layer by X-ray micro-analyses .The oxidation course is analyzed and discussed by changing of oxygen element content,and the law of oxidation rate vs time at constant temperature is obtained.The oxidation process stability and precision can be improved by lowering the oxidation temperature and prolonging the oxidation time.