PIN结构自扫描光电二极管列阵的理论分析及实验研究

提出了用PIN结构代替通用的PN结结构组成自扫描光电二极管列阵(SSPA)的构想,并从理论上推导了再充电采样的SSPA性能参数的一般表达式。由此推断出PIN结构SSPA具有高响应度高分辨率的特点。实验上制备出了不同光敏面积的PIN结构SSPA,并和相同面积的PN结结构SSPA比较。结果表明前者优于后者,与理论预期相一致。

Theoretical Analysis and Experimental Research of Self-Scanned Photodiode Array with PIN Structure

This paper proposes a new idea that Self-scanned Photodiode Array (SSPA) with the common PN structure is replaced by the PIN structure. Theoretically, the general formulae of the properties of recharged sampled mode SSPA are analysed in detail and a conclusion is drawn that SSPA with PIN structure has the properties of higher responsibility and higher resolution. We compare its properties with those of SSPA with PN structure of equal area photosensitive cell. The result shows that the former one has higher resposibility and the other parameter features are superior to the latter. The experimental results are consistent with the theory. The new type of imaging sensor with PIN structure can be widely used in the field of high speed data record,high resolving and dim light detection ect.