| 贮存电荷对非线性逻辑门开关通断速度的影响 |
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| 引用本文： | 郭愉生.贮存电荷对非线性逻辑门开关通断速度的影响[J].江汉大学学报(社会科学版),2000,17(3):62-68. |
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| 作者姓名： | 郭愉生 |
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| 作者单位： | 华中理工大学汉口分校基础课部!武汉430012 |
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| 摘 要： | 从Ｅｂｅｒｓ－Ｍｏｌｌ方程组出发，建立在矩形脉冲激励下的ＢＪＴ反相器的非线性耦合微分方程，介绍了ＭＡＴＨ程序语言在求解门开关电路的非线性耦合微分方程中的具体应用，说明中性区和空间电荷层内贮存电荷对逻辑门开关速度的影响。
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| 关 键 词： | 逻辑门开关 非线性 通断速度 贮存电荷 E－M模型 |
Effect of Store Charge on the Nonlinear Transistor Switch Vilocity |
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| GUO Yu-sheng.Effect of Store Charge on the Nonlinear Transistor Switch Vilocity[J].Journal of JIanghan University:Social Sciences,2000,17(3):62-68. |
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| Authors: | GUO Yu-sheng |
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| Abstract: | An application of MATH on deducing the nonlinear coupling differential equations of the BJT-Not gate, which is stimulated by rectangle pulse signal and is developed from Ebers-Moll equations is presented. The effect of storage charge on the nonlinear transistor switch vilocity in neutrality section and charge tier space are also disscussed. |
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| Keywords: | Ebers-Moll model charge control equation storage time extended |
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