| 外电场下GaAS／Ga_（1－x）Al_xAS量子阱中激子的结合能 |
| |
| 引用本文： | 谢洪鲸,陈传誉.外电场下GaAS／Ga_（1－x）Al_xAS量子阱中激子的结合能[J].广州师院学报,1994(1). |
| |
| 作者姓名： | 谢洪鲸 陈传誉 |
| |
| 作者单位： | 北京ＣＣＡＳＴ（世界实验室） |
| |
| 摘 要： | 本文采用推广的ＬＬＰ变分法研究纵光学声子对处于外电场下量子阱中激子结合能的影响。求出在不同外场及阱宽下的激子结合能。结果显示，纵光学声子对激子结合能有明显的影响。
|
| 关 键 词： | 量子阱 激子 结合能 声子 激子─声子相互作用 |
Binding Energy of Exciton in a GaAs/Ga_(1-x)Al_xAs Quantum Well within an Electric Field |
| |
| Authors: | Xie Hongjing Chen Chuanyu |
| |
| Abstract: | The influence of longitudinal optical (LO) phonons on the binding energy of exciton in a quantum well within an external electric field has been studied by a generalized LLP variational method. The binding energy is obtained as a function of the electric field strength as well as the well width. Resit shows that the LO-phonon influence in the binding energy is significant. |
| |
| Keywords: | quantum well exciton binding energy phonon exciton-phonon interaction |
| 本文献已被 CNKI 等数据库收录！ |
