| MOSFET中1/f噪声的Hooge参数α_H |
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| 引用本文： | 彭启琮.MOSFET中1/f噪声的Hooge参数α_H[J].电子科技大学学报(社会科学版),1988(Z2). |
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| 作者姓名： | 彭启琮 |
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| 作者单位： | 成都电讯工程学院无线电技术系 |
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| 摘 要： | 本文报道 P 沟道 MOSFET 器件中 1/f 噪声 Hooge 参数测量的部分实验结果.由加利福尼亚州的 SILICONIX 公司提供的实验样品是采用同样工艺作在同一块基片之上的.实验表明,在由非谐和状态到谐和状态过渡时,α_H 与沟道长度的平方成正比.类似的结果未曾见报道.
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| 关 键 词： | Hooge 参数 1/f噪声 MOSFET器件 噪声测量 沟道长度 |
THE HOOGE'S PARAMETER OF 1/f NOISE IN MOSFET |
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| Peng Qizong.THE HOOGE''''S PARAMETER OF 1/f NOISE IN MOSFET[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1988(Z2). |
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| Authors: | Peng Qizong |
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| Institution: | Dept.of Radio Technology |
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| Abstract: | This paper reports experimental results for the Hooge's paramentr a_(?)in p-MOSFET.The noise measurements are eprformed on devices with differentchannel length.All of the devices are fabricated by the same process on the samechip by SILICONIX in California.It is a clear indication for a transition of thea_H value from incoherent to cohrent state as the square of the channel length. |
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| Keywords: | Hooge's parameter 1/f noise MOSFET devices noise measurements channel length |
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