Bayesian Network Model with Application to Smart Power Semiconductor Lifetime Data

In this article, Bayesian networks are used to model semiconductor lifetime data obtained from a cyclic stress test system. The data of interest are a mixture of log‐normal distributions, representing two dominant physical failure mechanisms. Moreover, the data can be censored due to limited test resources. For a better understanding of the complex lifetime behavior, interactions between test settings, geometric designs, material properties, and physical parameters of the semiconductor device are modeled by a Bayesian network. Statistical toolboxes in MATLAB® have been extended and applied to find the best structure of the Bayesian network and to perform parameter learning. Due to censored observations Markov chain Monte Carlo (MCMC) simulations are employed to determine the posterior distributions. For model selection the automatic relevance determination (ARD) algorithm and goodness‐of‐fit criteria such as marginal likelihoods, Bayes factors, posterior predictive density distributions, and sum of squared errors of prediction (SSEP) are applied and evaluated. The results indicate that the application of Bayesian networks to semiconductor reliability provides useful information about the interactions between the significant covariates and serves as a reliable alternative to currently applied methods.