| GaN晶片的CMP加工工艺研究 |
| |
| 引用本文： | 孙 强,吴 健,李 伟. GaN晶片的CMP加工工艺研究[J]. 华南农业大学学报(社会科学版), 2011, 29(5) |
| |
| 作者姓名： | 孙 强 吴 健 李 伟 |
| |
| 作者单位： | 浙江工业大学 特种装备制造与先进加工技术教育部/浙江省重点实验室， 浙江 杭州310014 |
| |
| 摘 要： | 研究了GaN晶片的化学机械抛光(CMP)工艺，分析了在CMP加工工艺过程中对GaN晶片表面质量所产生的影响。实验采用质量分数30%的H2O2溶液与铁经过Fenton化学反应20 min后作为抛光液，并分别利用2种不同磨粒粒度W5和W0.5对晶片表面抛光，对不同工艺参数加工后的晶片表面进行测试分析，并推测加工过程中晶片表面可能发生的化学反应。
|
| 关 键 词： | 化学机械抛光；GaN晶片；Fenton反应 |
Study of the CMP Technical Processing of GaN Chip |
| |
| SUN Qiang,WU Jian,LI Wei. Study of the CMP Technical Processing of GaN Chip[J]. Journal of South China Agricultural University:Social Science Edition, 2011, 29(5) |
| |
| Authors: | SUN Qiang WU Jian LI Wei |
| |
| Affiliation: | Key Laboratory of Special Purpose Equipment and Advanced Machining Technology of Ministry of Education/Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China |
| |
| Abstract: | The article has studied the chemistry mechanical polishing processing of GaN chip, analyzed the influence of CMP processing on the GaN chip surface quality. The experiment took the density 30% H2O2solution and the iron after Fenton chemical responded about 20 mins as the polishing solution, Uses two kinds of different abrasive granularity W5 and W0.5 polished separately to the chip surface, carried on the analysis test to the chip surface after different technological parameter processing, and extrapolated the chemical reaction which possibly occured in the CMP processing in the chip surface. |
| |
| Keywords: | chemistry mechanical polishing(CMP) GaN chip fenton chemical reaction |
|
| 点击此处可从《华南农业大学学报(社会科学版)》浏览原始摘要信息 |
|
点击此处可从《华南农业大学学报(社会科学版)》下载全文 |
