| IMPATT器件的大信号分析 |
| |
| 引用本文： | 杜佳. IMPATT器件的大信号分析[J]. 电子科技大学学报(社会科学版), 1987, 0(2) |
| |
| 作者姓名： | 杜佳 |
| |
| 摘 要： | 在适当简化的物理模型上,借助计算机对IMPATT器件进行了大信号分析。计算给出了线性缓变DDR IMPATT器件的导纳、功率、效率等参数以及它们与频率、偏流、射频电压、串联电阻的依赖关系。
|
| 关 键 词： | IMPATT二极管 大信号特性 雪崩电流方程 数值计算 线性缓变DDR结构 |
LARGE-SIGNAL ANALYSIS OF IMPATT DEVI CES |
| |
| Du Jia. LARGE-SIGNAL ANALYSIS OF IMPATT DEVI CES[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 1987, 0(2) |
| |
| Authors: | Du Jia |
| |
| Abstract: | Based on a properly simplified model, the large-signal characteristics of IMPATT devices are obtained by a numerical computation. Those parameters of li-nea rity graded DDR IMPATT devices such as admittance, output power and effi-ci ency, and their dependence on the frequency, bias current density, RF voltage swing and series resistance are calculated and presented. |
| |
| Keywords: | IMPATT diode large-signal chaiacteristics equation for avalanche current density numerical calculation linearly graded junction DDR structure |
| 本文献已被 CNKI 等数据库收录！ |
