| 肖特基势垒和欧姆接触 |
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| 引用本文： | 孟庆忠. 肖特基势垒和欧姆接触[J]. 鲁东大学学报, 2000, 0(2) |
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| 作者姓名： | 孟庆忠 |
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| 作者单位： | 青岛大学师范学院物理系!山东青岛266071 |
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| 摘 要： | 用能带结构的观点分析了金属和半导体相接触时的机理 ,并简要介绍了肖特基二极管的构造及应用 .
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| 关 键 词： | 肖特基势垒 欧姆接触 费米能级 |
Schottcky barrier and Ohmic contact |
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| MENG Qing zhong. Schottcky barrier and Ohmic contact[J]. Ludong University Journal (Natural Science Edition), 2000, 0(2) |
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| Authors: | MENG Qing zhong |
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| Abstract: | The mechanism while the metal and semiconductor come into contact each other is analysed by using the standpoint of energy band structure.The structure and application of Schottcky diode are also introduced in brief. |
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| Keywords: | Schottcky barrier Ohmic contact Fermi level |
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