| 1000VMOSFET用常规低压工艺的实现 |
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| 引用本文： | 卢豫曾,方健. 1000VMOSFET用常规低压工艺的实现[J]. 电子科技大学学报(社会科学版), 1994, 0(4) |
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| 作者姓名： | 卢豫曾 方健 |
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| 作者单位： | 电子科技大学微电子所 |
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| 摘 要： | 采用常规低压集成电路工艺实现了耐压达１０００Ｖ的高压横向ＭＯＳＦＥＴ，详细介绍了该高压横向ＭＯＳＦＥＴ的设计方法、器件结构、工艺技术及测试结果。文中从实验和分析的角度上首次探讨了覆盖在漂移区上面的金属栅长度对该高压横向ＭＯＳＦＴ击穿电压的影响。
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| 关 键 词： | 高压，横向，金属－氧化物－半导体场效应晶体管，低压集成电路工艺，击穿电压，RESURF技术 |
1000V MOSFET IMPLEMENTED USING CONVENllONAL LOW-VOLTAGE TECHNOLOGY |
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| Lu Yuzeng, Fang Jian. 1000V MOSFET IMPLEMENTED USING CONVENllONAL LOW-VOLTAGE TECHNOLOGY[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 1994, 0(4) |
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| Authors: | Lu Yuzeng Fang Jian |
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| Abstract: | The 000V blocking capability of the lateral tigh-voltape MOSFET is achieved usingconventional low-voltage IC technology. The design, implementation and testing results of thishigh-voltage LDMOSFET are described . The effecd of the length of gate metal extension over the drift re-gion on the breakdown voltagr of the RESURF LDMOSFET is investigated using experimental and ana-lytical methods for the first time. |
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| Keywords: | high voltage lateral MOSFET low voltage integrated circuit technology breaddown voltage RESURF tehcnique |
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