| 真空微电子三极管与四极管的模拟计算 |
| |
| 引用本文： | 杨存宇,黄金源,杨中海. 真空微电子三极管与四极管的模拟计算[J]. 电子科技大学学报(社会科学版), 1999, 0(1) |
| |
| 作者姓名： | 杨存宇 黄金源 杨中海 |
| |
| 作者单位： | 电子科技大学高能电子所 |
| |
| 摘 要： | 对真空微电子三极管、四极管进行了计算机模拟。模拟结果显示了发射电流与场致增强因于依赖表面的尖端半径、尖端高度等几何因素，并对微四极管的特性进行了分析。最后将微电子三极管与实验结果进行了比较，得到若干实用的结论。
|
| 关 键 词： | 真空微电子，场致发射，计算机模拟，福勒－诺德海姆公式 |
Simulation of Vacuum-microelectronics microtriodes and microtetrodes |
| |
| Yang Cunyu,Huang Jingyuan, Yang Zhonghai. Simulation of Vacuum-microelectronics microtriodes and microtetrodes[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 1999, 0(1) |
| |
| Authors: | Yang Cunyu Huang Jingyuan Yang Zhonghai |
| |
| Abstract: | By meas of computer simulation, the characteristics of field emission microtriodes andmicrotetrodes are investigates in detail. The computed results show that the emitted current and the fieldenhancement depend upon geometrical factors , such as tip sharpness , tip height and so on. To compare theexperiment , a lot of praticable results are obtained. |
| |
| Keywords: | vacuum-microelectronics field emission computer simulation Fowler-Nordheimequation |
| 本文献已被 CNKI 等数据库收录！ |
