| 不同掺Al~(3+)浓度的ZnO:Al薄膜性能研究 |
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| 引用本文： | 葛启函,邓宏,陈航,徐自强. 不同掺Al~(3+)浓度的ZnO:Al薄膜性能研究[J]. 电子科技大学学报(社会科学版), 2006, 0(2) |
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| 作者姓名： | 葛启函 邓宏 陈航 徐自强 |
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| 作者单位： | 电子科技大学微电子与固体电子学院 成都610054 |
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| 摘 要： | 采用溶胶-凝胶法制备ZnO:Al(ZAO)薄膜,得到了不同掺Al3 浓度的ZAO薄膜;利用X射线衍射仪分析、原子力显微镜、紫外-可见分光光度计及四探针法等仪器与方法对其性能进行了测试。通过分析比较,得出所制备的ZAO薄膜为多晶纤锌矿结构,薄膜表面平整、晶粒致密均匀;Al3 掺杂能提高其导电性能:低掺杂时,薄膜在紫外-可见光范围的透过率超过80%,并伴有蓝移现象产生;高掺杂时,其透过率无明显增加,但蓝移现象加剧,最大蓝移量达340nm。
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| 关 键 词： | ZnO:Al薄膜 Al3 掺杂 溶胶凝胶法 表面结构 光电性能 |
Property Research of ZnO:Al Thin Films with Different Proportion of Al~(3+) Doping |
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| GE Qi-han,DENG Hong,CHEN Hang,XU Zi-qiang. Property Research of ZnO:Al Thin Films with Different Proportion of Al~(3+) Doping[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 2006, 0(2) |
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| Authors: | GE Qi-han DENG Hong CHEN Hang XU Zi-qiang |
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| Abstract: | ZnO:Al (ZAO) thin films with different proportion of Al3 doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained: ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure , the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3 doping. The transmittance in ultraviolet-visible region is higher than 80% with hypo-Al3 doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm. |
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| Keywords: | ZnO:Al thin films Al3 doping sol-gel conductivity transmittance |
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