| 具有场板结构GaN HEMT电场分布解析模型 |
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| 引用本文： | 杜江锋,赵金霞,伍捷,杨月寒,武鹏,靳翀,陈卫.具有场板结构GaN HEMT电场分布解析模型[J].电子科技大学学报(社会科学版),2008(2). |
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| 作者姓名： | 杜江锋 赵金霞 伍捷 杨月寒 武鹏 靳翀 陈卫 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室;电子科技大学电子薄膜与集成器件国家重点实验室 成都; |
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| 基金项目： | 国家自然科学基金(6140449) |
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| 摘 要： | 基于具有场板结构GaN HEMT器件物理和基本器件方程,导出了器件加场板前后表面电场分布和峰值电场解析模型。当场板长度LFP与绝缘层厚度tox最优时,GaN HEMT栅极边缘电场峰值可降低至未加场板时的22%;若保持峰值电场恒定,则其漏端电压可由没有场板时的50V提高到加场板后的225V,增幅高出4倍。该解析模型所导出的电场分布与国外新近发表的源于器件方程和经验公式的模拟和实验结果基本吻合,为GaN HEMT器件场板设计提供了理论依据。
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| 关 键 词： | 解析模型 击穿电压 电场分布 场板 GaN |
Electric Field Distribution Analytic Model for Field-Plated GaN HEMT |
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| DU Jiang-feng,ZHAO Jin-xia,WU Jie,YANG Yue-han,WU Peng,JIN Chong, CHEN Wei.Electric Field Distribution Analytic Model for Field-Plated GaN HEMT[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),2008(2). |
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| Authors: | DU Jiang-feng ZHAO Jin-xia WU Jie YANG Yue-han WU Peng JIN Chong CHEN Wei |
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| Institution: | DU Jiang-feng,ZHAO Jin-xia,WU Jie,YANG Yue-han,WU Peng,JIN Chong,, CHEN Wei (State Key Laboratory of Electronic Thin Films , Integrated Devices,University of Electronic Science , Technology of China Chengdu 610054) |
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| Abstract: | In the light of physics and basic equations of GaN-based high-electron mobility transistors (HEMT) with a field-plate,an analytic model of the surface electric field distribution and peak electric field are achieved. According to our model,when the field-plate length LFP and dielectric layer thickness tox are optimized,the peak electric field decreases to 22 % compared with the condition with no field plate. With a well designed field plate applied,the maximum drain voltage can be improved from 50 V to 225 ... |
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| Keywords: | analytic model breakdown voltage electric field distribution field plate GaN |
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