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| ZnO:Al薄膜性质研究 | |
| 引用本文： | 杨春容,袁正希,薛书文,邓宏. ZnO:Al薄膜性质研究[J]. 湛江师范学院学报, 2006, 27(6): 37-40 |
| 作者姓名： | 杨春容 袁正希 薛书文 邓宏 |
| 作者单位： | 1. 电子科技大学,微电子与固体电子学院,四川,成都,610054 2. 电子薄膜与集成器件国家重点实验室,四川,成都,610054 3. 电子科技大学,物理电子学院,四川,成都,610054 4. 电子科技大学,微电子与固体电子学院,四川,成都,610054;电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
| 基金项目： | 国家自然科学基金;国防科技预研项目 |
| 摘 要： | 采用溶胶-凝胶法在硅(100)和玻璃衬底上制备了掺铝氧化锌(ZnO:Al)薄膜.当掺Al3 浓度小于或等于15%时,得到的薄膜均为单一c轴取向.c轴晶格常数随掺Al3 浓度的增加逐渐减小,当掺Al3 浓度增至15%时,薄膜c轴晶格常数值减小约0.56%.薄膜的光学带隙随掺Al3 浓度的增加而增大,掺Al3 20%的薄膜光学带隙达到3.99 eV.O1s结合能随掺Al3 浓度的增加而增大. |
| 关 键 词： | 掺铝氧化锌薄膜 c轴取向 光学带隙 结合能 |
| 文章编号： | 1006-4702（2006）06-0037-04 |
| 收稿时间： | 2006-10-29 |
| 修稿时间： | 2006-10-29 |
A Study on the Properties of ZnO:Al thin films |
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| YANG Chun-rong,YUAN Zheng-xi,XUE Shu-wen,DENG Hong. A Study on the Properties of ZnO:Al thin films[J]. Journal of Zhanjiang Normal College, 2006, 27(6): 37-40 | |
| Authors: | YANG Chun-rong YUAN Zheng-xi XUE Shu-wen DENG Hong |
| Abstract: | ZnO:Al thin films were deposited onto silicon(100) and glass substrates by sol-gel process.The Al-doped ZnO thin films with doping level below 15% showed only c-axis orientation.The c axis constant decreased with increasing Al content,and the c-axis constant of ZnO:Al thin films with Al content of 15% decreased by about 0.56% compared with that of ZnO crystal.The optical band-gap showed evidently blueshift with increasing the Al3 concentration.For the sample doped with 20% Al3 content,the optical band-gap energy reached 3.99 eV.The binding energy of O1s increased with increasing Al content. |
| Keywords: | Al-doped zinc oxide thin films c-axis orientation optical band-gap energy binding energy |
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