| 调制掺杂场效应晶体管的直流特性 |
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| 引用本文： | 朱旗.调制掺杂场效应晶体管的直流特性[J].电子科技大学学报(社会科学版),1990(2). |
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| 作者姓名： | 朱旗 |
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| 作者单位： | 电子科技大学微电子学与工程系 四川大学原子核所工作 |
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| 摘 要： | 对调制掺杂场效应晶体管的栅控特性进行了研究。考虑费米能级随二维电子气浓度的变化,计算了器件的直流特性。计算结果包括在阈值电压附近以及非饱和区,与实验结果吻合较佳。
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| 关 键 词： | 调制 掺杂 砷化镓 场效应晶体管 二维电子气 |
THE DC CHARACTERISTICS ANALYSIS OF MODULATION DOPED(Al,Ga)As/GaAs FIELD EFFECT TRANSISTOR |
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| Zhu Qi.THE DC CHARACTERISTICS ANALYSIS OF MODULATION DOPED(Al,Ga)As/GaAs FIELD EFFECT TRANSISTOR[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1990(2). |
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| Authors: | Zhu Qi |
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| Institution: | Dept.of Microelectronic Science and Technology |
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| Abstract: | The characteristics of gate charge control of modulation doped field effecttransistors(MODFET)is studied.With the two dimensional electron gas model,consider-ing the nonlinear shift of Fermi level with electron gas density,the DC output characteris-tics is calculated.The calculation result is in good agreement with the experimental data. |
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| Keywords: | modulation doped gallium arsenid field effect transistor two dimensional electron gas |
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