| 集成电路互连线电迁移建模综述(英文) |
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| 引用本文： | 马建国,姚明,TAN Cher Ming. 集成电路互连线电迁移建模综述(英文)[J]. 电子科技大学学报(社会科学版), 2009, 0(5) |
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| 作者姓名： | 马建国 姚明 TAN Cher Ming |
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| 作者单位： | 电子科技大学电子工程学院;新加坡南洋理工大学电气与电子工程学院; |
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| 基金项目： | Natural Science Foundation of China(NSFC60688101); National 111 Project~~ |
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| 摘 要： | 简要介绍了集成电路互连线建模发展的历史。回顾了曾广泛使用的一维电迁移引起的回流模型。基于原子通量散度的概念,电迁移建模可以分为两种方法。一种是常用的扩散路径法,该方法能够解释传统的铝片上金属互连的许多重要电迁移现象。然而,随着芯片尺寸越来越小,工业界为了追求更好的性能,转向了使用铜/低k组合作为互连材料,同时引进了三维集成电路技术。顺应这种趋势,第二种驱动力电迁移建模方法发展了起来,该方法有助于人们理解窄互连工艺中的许多现象。有限元模拟也越来越多地用于驱动力分析法。
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| 关 键 词： | 扩散路径法 驱动力法 电迁移 有限元 集成电路 互连线 建模 |
Review of Electromigration Modeling of IC Interconnects |
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| MA Jian-guo,YAO Ming,, TAN Cher Ming. Review of Electromigration Modeling of IC Interconnects[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 2009, 0(5) |
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| Authors: | MA Jian-guo YAO Ming TAN Cher Ming |
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| Affiliation: | MA Jian-guo1,YAO Ming1,, TAN Cher Ming2 (1.School of Electronic Engineering,University of Electronic Science , Technology of China Chengdu 610054,2.School of Electrical , Electronic Engineering,Nanyang Technological University Singapore) |
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| Abstract: | The history of electromigration(EM) modeling of IC interconnects is briefly reviewed.The widely used one-dimension(1-D) EM-induced back flow model is introduced.Based on the conception of atomic flux divergence(AFD),the EM modeling can also be mainly grouped into two approaches.One is the conventional diffusion path approach,which has explained many important phenomena in traditional Al on-chip metallization.However,the microelectronic industry has turned to Cu/low-k interconnects in need of better performa... |
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| Keywords: | diffusion path approach driving force approach electromigration FEM ICs interconnects modeling |
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