| 掺硼金刚石膜热敏电阻器的制备工艺及温度响应 |
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| 引用本文： | 贾宇明,杨邦朝,李言荣.掺硼金刚石膜热敏电阻器的制备工艺及温度响应[J].电子科技大学学报(社会科学版),1996(3). |
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| 作者姓名： | 贾宇明 杨邦朝 李言荣 |
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| 作者单位： | 电子科技大学信息材料工程学院 |
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| 摘 要： | 介绍了一种帽状结构的掺硼金刚石膜热敏电阻器及其制备工艺。使用ＰＣＶＤ方法在Ｓｉ３Ｎ４或Ｓｉ基片上淀积掺硼金刚石膜，然后在金刚石膜上淀积Ｔｉ／Ａｕ薄膜以形成欧姆接触电极。结果获得了具有良好温度响应和欧姆接触的金刚石膜热敏电阻器。
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| 关 键 词： | 掺硼金刚石膜，热敏电阻器，温度响应，欧姆接触 |
Preparation Process and Temperature Response of a Boron Doped Diamond Film Thermistor |
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| Jia Yuming ,Yang Bangchao, Li Yanrong.Preparation Process and Temperature Response of a Boron Doped Diamond Film Thermistor[J].Journal of University of Electronic Science and Technology of China(Social Sciences Edition),1996(3). |
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| Authors: | Jia Yuming Yang Bangchao Li Yanrong |
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| Abstract: | A born-doped diamond film thermistor with cap structure and the thermistor's preparation process are introduced in this paper. By using the microwave PCVD method,boron-doped diamond films are deposited on Si3N4 or Si substrates. Then Ti/Au films are evaporated on the diamond films as ohmic contact electrodes. As a result,the thermistor of good temperature response and ohmic contact are obtained. |
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| Keywords: | boron-doped diamond films thermistor temperature respose ohmic contact |
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