| 高速SOI-LIGBT的数值分析 |
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| 引用本文： | 杨健,方健,李肇基. 高速SOI-LIGBT的数值分析[J]. 电子科技大学学报(社会科学版), 2000, 0(2) |
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| 作者姓名： | 杨健 方健 李肇基 |
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| 作者单位： | 电子科技大学微电子所!成都610054 |
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| 基金项目： | 国家“九五”预研基金资助，国防基金资助 |
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| 摘 要： | 研制出Ｈｅ离子注入局域寿命控制ＳＯＩ横向绝缘栅双极晶体管（ＳＯＩ－ＬＩＧＢＴ），有效地提高了器件的关断速度，且与集成电路工艺相兼容。数值模拟表明，该器件的t_f～V_F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低０．６～１．４ Ｖ，避免了阳极短路结构的正向快速返回现象。
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| 关 键 词： | 横向绝缘栅 双极晶体管 智能功率集成电路 局域寿命控制 关断速度 正向压降 |
Numerical Analysis of High Speed SOI-LIGBT |
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| Yang Jian Fang Jian Li Zhaoji. Numerical Analysis of High Speed SOI-LIGBT[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 2000, 0(2) |
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| Authors: | Yang Jian Fang Jian Li Zhaoji |
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| Abstract: | He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process. It is demonstrated by numerical simulation that the trade- off is superior to the devices using unlocalized lifetime control, the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed, and it can avoid the snap-back phenomena of anode-short structure. |
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| Keywords: | insulated gate bipolar transistor smart power integrated circuit localized lifetime control turn off time forward voltage drop |
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