| 外电场对压力下有限深量子阱中杂质态结合能的影响 |
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| 引用本文： | 温淑敏.外电场对压力下有限深量子阱中杂质态结合能的影响[J].内蒙古工业大学学报,2009,28(3):182-187. |
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| 作者姓名： | 温淑敏 |
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| 作者单位： | 内蒙古工业大学理学院物理系,呼和浩特010051 |
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| 基金项目： | 内蒙古工业大学校基金资助项目（X200834） |
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| 摘 要： | 考虑压力及屏蔽效应,利用变分法讨论外电场下有限深量子阱中的施主杂质态能级.对GaAs/AL0.3Ga0.7As量子阱系统中的杂质态结合能进行了数值计算,给出结合能随阱宽和电场强度的变化关系,并讨论了有无压力和屏蔽时的区别.结果显示,施主结合能随电场强度增加或减少既依赖于杂质位置的不同又依赖于阱宽的不同,电场强度对杂质态的结合能影响也与压力及屏蔽有关.
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| 关 键 词： | 量子阱 屏蔽 压力 杂质态 结合能 外电场 |
INFLUENCE OF AN EXTERNAL ELECTRIC FIELD ON THE BINDING ENERGIES OF DONORS IN QUANTUM WELLS WITH FINITE BARRIERS UNDER HYDROSTATIC PRESSURE |
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| WEN Shu-min.INFLUENCE OF AN EXTERNAL ELECTRIC FIELD ON THE BINDING ENERGIES OF DONORS IN QUANTUM WELLS WITH FINITE BARRIERS UNDER HYDROSTATIC PRESSURE[J].Journal of Inner Mongolia Polytechnic University(Social Sciences Edition),2009,28(3):182-187. |
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| Authors: | WEN Shu-min |
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| Institution: | WEN Shu-min(Inner Mongolia University of Technology,Hohhot 010051,China) |
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| Abstract: | A variational method is adopted to discuss an applied electric field effect on the binding energy of an impurity in GaAs/Al0.3Ga0.7As quantum well by considering the pressure and screening effect.The relations between the binding energies of donors and well width and applied electric field are given.The difference between the cases with and without screening and pressure are also discussed.The results show that the binding energies increase or decrease with electric field dependence on difference positions of the donor impurity and well width.Effect of electric field on the binding energy influence on the binding energy becomes more obvious when considering the pressure and screening. |
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| Keywords: | quantum well screening pressure impurity state binding energy external electric field |
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