| PECVD法制备SnO_2气敏元件的研究 |
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| 引用本文： | 杨树坤. PECVD法制备SnO_2气敏元件的研究[J]. 电子科技大学学报(社会科学版), 1987, 0(1) |
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| 作者姓名： | 杨树坤 |
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| 摘 要： | 采用等离子体增强化学汽相沉积薄膜型SnO_2的方法,研究了不同掺杂浓度及衬底温度对成膜的影响,用能带论估算了表面吸附原子密度,并测量了元件对石油气、氢气的灵敏度。
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| 关 键 词： | 等离子体 化学 气相沉积 二氧化钖 灵敏度 能带理论 吸附 密度 气敏传感器 |
STUDY OF SnO_2 THIN FILM GAS SENSORS BY PECVD |
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| Yang Shukun. STUDY OF SnO_2 THIN FILM GAS SENSORS BY PECVD[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 1987, 0(1) |
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| Authors: | Yang Shukun |
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| Affiliation: | Yang Shukun |
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| Abstract: | This paper introduces a method of depositing SnO_2 film by PECVD. The sensitivity of the thin film sensors to LPG and H_2 in respect to their operating condition is studied. The effect of doping level on the SnO_2 fiim is also investigated. The density of the surface abrorbed atoms is evaluated from the band theory. |
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| Keywords: | plasma chemistry vapor phase deposition stannic oxide sensitivity band theory adsorption density gas sensor |
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