| 新型的电平移位电路设计 |
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| 引用本文： | 范涛,黄强,杜波,袁国顺. 新型的电平移位电路设计[J]. 电子科技大学学报(社会科学版), 2011, 0(1) |
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| 作者姓名： | 范涛 黄强 杜波 袁国顺 |
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| 作者单位： | 中国科学院微电子研究所; |
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| 基金项目： | 国家科技重大专项02专项(2010ZX02201-003-003) |
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| 摘 要： | 针对高压驱动电路控制提出了新的具有很大驱动电流和很小静态功耗电平移位栅电压控制电路。该电路主要利用二极管的反向工作特性,结合正反馈电路,分别为输出级PMOS管和NMOS管提供可靠栅驱动信号。该电路采用CSMC的0.5μm工艺实现,测试结果表明,所设计的电平转换功能得到实现,且转换速度快。
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| 关 键 词： | 驱动电路 半桥驱动器 低功耗 电平移位 薄栅氧 |
Design of New Level Shifter |
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| FAN Tao,HUANG Qiang,DU Bo, YUAN Guo-shun. Design of New Level Shifter[J]. Journal of University of Electronic Science and Technology of China(Social Sciences Edition), 2011, 0(1) |
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| Authors: | FAN Tao HUANG Qiang DU Bo YUAN Guo-shun |
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| Affiliation: | FAN Tao,HUANG Qiang,DU Bo,and YUAN Guo-shun (Institute of Microelectronics,Chinese Academy of Sciences Chaoyang Beijing 100029) |
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| Abstract: | A new level shifter with high driving current and low static power consumption is proposed.It makes use of reverse characteristic of diode and positive feedback to generate reliable driving signal for NMOS and PMOS transistor respectively.The level shifter is fabricated in CSMC 0.5 m CMOS technology.The measured result shows that the circuit has the function of level shift and high conversion speed. |
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| Keywords: | driving circuit half-bridge driver level shifter low power consumption thin gate oxide |
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